型号/品牌/封装
品类/描述
库存
价格(含税)
资料
-
![]()
品类: 放大器IC与RF模块描述: 射频放大器 31dBm GaAs Amp66235+￥20.919650+￥20.0256200+￥19.5250500+￥19.39981000+￥19.27462500+￥19.13165000+￥19.04227500+￥18.9528 -
![]()
品类: 放大器IC与RF模块描述: 的InGaP HBT 2.3 - 2.5 GHz功率放大器 InGaP HBT 2.3 - 2.5 GHz Power Amplifier166710+￥6.1800100+￥5.8710500+￥5.66501000+￥5.65472000+￥5.61355000+￥5.56207500+￥5.520810000+￥5.5002 -
![]()
品类: 放大器IC与RF模块描述: ANALOG DEVICES HMC3653LP3BE 芯片, 射频放大器, 15DB, 15GHZ, 5V, HVQFN-12139410+￥0.702050+￥0.6656100+￥0.6396300+￥0.6240500+￥0.60841000+￥0.59282500+￥0.56945000+￥0.5642 -
![]()
品类: 放大器IC与RF模块描述: ANALOG DEVICES HMC3587LP3BE 芯片, 放大器, 4-10GHZ增益块25125+￥1.552525+￥1.437550+￥1.3570100+￥1.3225500+￥1.29952500+￥1.27085000+￥1.259310000+￥1.2420 -
![]()
品类: 放大器IC与RF模块描述: ANALOG DEVICES HMC441LC3B 芯片, 射频放大器, 14DB, 18GHZ, 5V, HQFN-1262801+￥325.174010+￥316.691250+￥310.1877100+￥307.9256200+￥306.2291500+￥303.96701000+￥302.55322000+￥301.1394 -
![]()
品类: 放大器IC与RF模块描述: 砷化铟镓 - E- pHEMT制模式的低噪声放大器 InGaAs - E-Mode pHEMT Low Noise Amplifier54145+￥4.104025+￥3.800050+￥3.5872100+￥3.4960500+￥3.43522500+￥3.35925000+￥3.328810000+￥3.2832 -
![]()
品类: 放大器IC与RF模块描述: 射频放大器, InGaP HBT, 2300MHz至2700MHz, 31dBb增益, 3.8dB噪声, 3V至5V, HVQFN-1232191+￥39.881810+￥37.5935100+￥35.8936250+￥35.6321500+￥35.37061000+￥35.07642500+￥34.81495000+￥34.6514 -
![]()
品类: 放大器IC与RF模块描述: RF Amp Chip Single GP 2.8GHz 6V 12Pin QFN EP T/R26161+￥58.178510+￥55.6490100+￥55.1937250+￥54.8396500+￥54.28311000+￥54.03012500+￥53.67605000+￥53.3725 -
![]()
品类: 放大器IC与RF模块描述: 射频放大器, InGaP HBT, 2级, 130MHz至1000MHz, 30db增益, 3V至5V, HVQFN-1263341+￥58.035410+￥54.7055100+￥52.2319250+￥51.8513500+￥51.47071000+￥51.04262500+￥50.66215000+￥50.4242
